Environment-dependent tight-binding potential model
نویسندگان
چکیده
منابع مشابه
Environment-dependent tight-binding potential model.
We present a tight-binding model which goes beyond the traditional two-center approximation and allows the hopping parameters and the repulsive energy to be dependent on the binding environment. Using carbon as an example, we show that the approach improves remarkably the transferability of the tight-binding model. The properties of the higher-coordinated metallic structures are well described ...
متن کاملAnalytic environment-dependent tight-binding bond integrals: application to MoSi2.
We present the first derivation of explicit analytic expressions for the environmental dependence of the sigma, pi, and delta bond integrals within the orthogonal two-center tight-binding approximation by using the recently developed bond-order potential theory to invert the nonorthogonality matrix. We illustrate the power of this new formalism by showing that it not only captures the transfera...
متن کاملCalculation for Energy of (111) Surfaces of Palladium in Tight Binding Model
In this work calculation of energetics of transition metal surfaces is presented. The tight-binding model is employed in order to calculate the energetics. The tight-binding basis set is limited to d orbitals which are valid for elements at the end of transition metals series. In our analysis we concentrated on electronic effects at temperature T=0 K, this means that no entropic term will be pr...
متن کاملBond-Order Potentials with Analytic Environment-Dependent Tight-Binding Integrals: Application to BCC Molybdenum
We present a new Screened Bond-Order Potential (SBOP) for molybdenum in which the environmental dependence of two-center tight-binding bond integrals has been implemented via a recently developed analytic expression. These bond integrals reproduce very well the numerical ab-intio values of screened LMTO bond integrals. In particular, they display the large discontinuity in ddpi between the firs...
متن کاملAtomistic simulation studies of complex carbon and silicon systems using environment-dependent tight-binding potentials
The use of tight-binding formalism to parametrize electronic structures of crystals and molecules has been a subject of continuous interests since the pioneer work of Slater and Koster [1] more than a half of a century ago. Tight-binding method has attracted more and more attention in the last 20years due to the development of tight-binding potential models that can provide interatomic forces f...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 1996
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.53.979